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STMicroelectronics releases SiC MOSFETs for 800 V drive systems

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STMicroelectronics has released its third generation of STPOWER silicon-carbide (SiC) MOSFETs, intended for 800 V drive systems. ST’s new SiC devices are designed for traction inverters, on-board chargers, DC-DC converters and e-climate compressors. The new components are designed to boost the efficiency of motor drives, renewable-energy converters and storage systems.

Devices with nominal voltage ratings from 650 V and 750 V up to 1,200 V will be available, giving more choices for designers to address applications operating from ordinary AC line voltages up to those of high-voltage EV batteries and chargers. The first products available are the 650 V SCT040H65G3AG and a 750 V device in die form.

SiC says its MOSFETs have a higher voltage rating in relation to their die size, compared to silicon alternatives. The devices have a fast intrinsic diode that delivers the bidirectional properties needed for automotive on-board chargers (OBCs) used in Vehicle-to-X (V2X) applications. The company says the devices’ very high frequency capability allows smaller passive components to be used, permitting more compact and lightweight electrical equipment in the vehicle. 

ST will offer the devices in bare dice form, discrete power packages such as STPAK, H2PAK-7L, HiP247-4L, HU3PAK, and power modules of the ACEPACK family. Design features include strategically-placed cooling tabs that simplify connection to base plates and heat spreaders. The options give designers choices that are optimized for main traction inverters, OBCs, DC-DC converters, e-climate compressors and industrial applications.

“We continue to drive this exciting technology forward with innovations at both the device and package levels. As a fully integrated SiC products manufacturer, we are able to deliver continued improved performance to our customers,” said Edoardo Merli, STMicroelectronics General Manager.

Source: STMicroelectronics

This article was originally published by Chargedevs.com. Read the original article here.
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